Video Lecture Series from IIT Professors :
Semiconductor Device Modeling by Prof. S. Karmalkar sirShreepad Karmalkar is a Professor of Electrical Engineering at IITM. He received the B. Tech and accelerated PhD degrees in Electrical Engineering from the Indian Institute of Technology Madras (IITM), in 1983 and 1989, respectively. He has held visiting research / teaching assignments at several US universities, namely, University of California, Santa Barbara; Rensselaer Polytechnic Institute, Troy, New York; and University of South Carolina, Columbia, USA.
He has authored numerous articles in journals, conferences and books, and has been awarded several patents in the areas of semiconductor device modeling and process development. For his research contributions, he has received the 2005 Vikram Sarabhai Award and a 2007 IBM Faculty Award. His contributions in the field of education include video courses on Solid State Devices and Semiconductor Device Modeling hosted on the internet (see links below), and a lecturecumactivity oriented course to foster research skills among research scholars. He is an Associate Editor of IEEE Transactions on Education.
He also acts as a
consultant to industries for developing manufacturing processes for
semiconductor devices, and as a reviewer of several reputed journals.
He was a member of
the National Working Group on Nanotechnology set up by Department of
Information Technology, Govt of India.
He was the Coordinator of the Educational Technology Cell, and ViceChairman of JEE 2006 and Chairman of JEE 2007 operations in the South Zone.
He was the Coordinator of the Educational Technology Cell, and ViceChairman of JEE 2006 and Chairman of JEE 2007 operations in the South Zone.
Postal Address

: Department of
Electrical Engineering
Indian Institute of Technology Madras Chennai  600036 
Office

: Room 212C,
Electrical Sciences Block

Phone

:
914422575415 (Lab), 4409 (O), 6409 (R), 944490  8220 (M)

Email

:
karmal(at)ee.iitm.ac.in

Education

: PhD (Directly
after B.Tech), IIT Madras (1989)
BTech (EE), IIT Madras (1983) 
:
Course Learning Outcomes
At the end of this course you should be able to
 Explain the equations, approximations and techniques available for deriving a model with specified properties, for a general device characteristic with known qualitative theory
 Apply suitable approximations and techniques to derive the model referred to above starting from driftdiffusion transport equations (assuming these equations hold)
 Offer clues to qualitative understanding of the physics of a new device and conversion of this understanding into equations
 Simulate characteristics of a simple device using MATLAB, SPICE and ATLAS / SYNOPSYS
 Explain how the equations get lengthy and parameters increase in number while developing a compact model
 List mathematical functions representing various nonlinear shapes
Module no.

Module Learning Outcomes

No. of (Total) Hours

0

Motivation, Contents and Learning Outcomes 
1

1

Introduction At the end of this module you should be able to

1

2

Semiclassical Bulk Transport – Qualitative Model At the end of this module you should be able to explain qualitatively the following in semiconductors


3

Semiclassical Bulk Transport – EM field and Transport Equations At the end of this module you should be able to


4

DriftDiffusion Transport Model – Equations, Boundary Conditions, Mobility and Generation / Recombination At the end of this module, you should be able to write, for the widely used driftdiffusion transport model,


5

Characteristic times and lengths At the end of this module, you should be able to
* excess EHP concentration * spacecharge


6

Energy band diagrams At the end of this module you should be able to


7

SQEBASTIP: The Nine Steps of Deriving a Device Model At the end of this module, you should be able to


8

Types of Device Models At the end of this module, you should be able to


9

MOSFET Model: Structure and Characteristics, Qualitative Model  Under development  

10

MOSFET Model: Equations, Boundary Conditions and Approximations  Under development  

11

MOSFET Model: Surface Potential based and Threshold based solutions  Under development  

12

MOSFET Model: Testing, Improvement and Parameter Extraction  Under development  
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