GATE 1989 ECE Video Solutions on EDC (Electronic Devices and Circuits)

1.       Due to illumination by light, the electron and hole concentrations in a heavily doped N-type semiconductor increases by Δn and Δp respectively, if n_i is the intrinsic carrier concentration then

a.       Δn < Δp

b.      Δn > Δp

c.       Δn = Δp

d.      Δn x Δp = n_i²

                 Solution : https://www.youtube.com/watch?v=Kdb4wbs7aoQ

2.       The concentration of ionized acceptors and donors in a semiconductor are N_A, N_D respectively. If N_A > N_D and n_i is the intrinsic  concentration, then the position of the Fermi level with respect to the intrinsic level depends on

a.       N_A – N_D

b.      N_A + N_D

c.       (N_A x N_D) / n_i²

d.      n_i

                 Solution :  https://www.youtube.com/watch?v=fncmLfR38V0

3.       The switching speed of P⁺N junction depends primarily on

a.       the mobility of minority carriers in the P⁺ region

b.      the lifetime of minority carriers in the P⁺ region

c.       the mobility of majority carriers in the N region

d.      the lifetime of majority carriers in the N region

                 Solution :  https://www.youtube.com/watch?v=vPptctf8wSU

4.       In a Zener diode,

a.       only P-region is heavily doped

b.      only N-region is heavily doped

c.       both P and N-regions are heavily doped

d.      both P and N-regions are lightly doped

                 Solution :  https://www.youtube.com/watch?v=IoURnPVCyRI

5.       In a MOSFET, the polarity of the inversion layer is the same as that of the

a.       Charge on the gate electrode

b.      Minority carriers in the drain

c.       Majority carriers in the substrate

d.      Majority carriers in the source

                 Solution :   https://www.youtube.com/watch?v=EoJQBXa0NT0